| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,280 pcs
|
1280 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
113 pcs
|
113 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTD60N02RT4G is an N-Channel MOSFET featuring a planar HD3e process for fast switching performance. It offers low RDS(on) to minimize conduction loss and low Ciss to minimize driver loss. This MOSFET is optimized for high-side switching requirements in high-efficiency DC-DC converters.
Key electrical specifications include a drain-to-source voltage (Vdss) of 25V, a continuous current rating of 8.5A (Ta) and 32A (Tc), and a maximum Rds(on) of 10.5mOhm at 20A and 10V. The input capacitance (Ciss) is 1330 pF at 20V, and the gate charge (Qg) is 14 nC at 4.5V. The gate-source voltage (Vgs) maximum is ±20V, with a gate threshold voltage (Vgs(th)) of 2V at 250µA.
This device operates within a temperature range of -55°C to 175°C (TJ). It is available in a DPAK (TO-252-3, DPak) surface mount package. The power dissipation is rated at 1.25W (Ta) and 58W (Tc).
ON Semiconductor also offers Pb-Free packages for this part, and it is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTD60N02RT4G is 25V.
The continuous current rating is 8.5A when measured at the ambient temperature (Ta) and 32A when measured at the case temperature (Tc).
The maximum Rds(on) is 10.5mOhm when the device is operating at 20A and a gate-source voltage of 10V.
The operating temperature range for the NTD60N02RT4G is -55°C to 175°C (TJ).
The NTD60N02RT4G is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, which is a surface mount type.
Yes, the NTD60N02RT4G is RoHS3 compliant.