NTD600N80S3Z The ON Semiconductor NTD600N80S3Z is an 800V N-Channel SUPERFET III MOSFET. It offers a low Rds(on) of 600mOhm and a continuous drain current of 8A.
Mfr Part #:

NTD600N80S3Z

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTD600N80S3Z is an 800V N-Channel SUPERFET III MOSFET. It offers a low Rds(on) of 600mOhm and a continuous drain current of 8A.
✓ Total Stock: 16,000 pcs
$ Price Range: $2.38

NTD600N80S3Z Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
15,000 pcs
15000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

NTD600N80S3Z Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD600N80S3Z Description

Short technical summary and product information.

The NTD600N80S3Z is an 800V N-Channel SUPERFET III MOSFET from ON Semiconductor, designed for high-performance switching power applications. It features a low on-state resistance (Rds(on)) of 600mOhm at 4A and 10V, and a typical gate charge of 15.5 nC. This MOSFET is rated for a continuous drain current of 8A at 25°C case temperature and a maximum power dissipation of 60W.

 

Optimized for primary switch applications in flyback converters, this MOSFET enables lower switching losses and reduced case temperatures without compromising EMI performance. Its internal Zener Diode enhances ESD capability. The device operates across a wide temperature range of -55°C to 150°C.

 

Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, the NTD600N80S3Z is suitable for applications such as laptop adapters, LED lighting, auxiliary power supplies, audio equipment, and industrial power supplies. It boasts 100% avalanche tested and RoHS 3 compliance.

NTD600N80S3Z Quick Information

Product Type: MOSFET
Series: NTD600N80S3Z
Canonical Name: NTD600N80S3Z N-Channel SUPERFET III MOSFET
Subcategory: N-Channel

NTD600N80S3Z Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD600N80S3Z Estimated Pricing

Qty Low High
1+ $2.38 $2.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD600N80S3Z Features

  • 800V breakdown voltage rating.
  • Low 600mOhm Rds(on) typical.
  • 8A continuous drain current.
  • TO-252 surface mount package.
  • Internal Zener diode for ESD protection.

NTD600N80S3Z Applications

  • Optimized for flyback converters.
  • Used in laptop adapters and chargers.
  • Suitable for LED lighting applications.
  • Applicable in industrial power supplies.
  • Designed for auxiliary power circuits.

NTD600N80S3Z FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTD600N80S3Z?

The maximum drain-to-source voltage (Vdss) is 800 V.

What is the typical on-state resistance (Rds(on)) of this MOSFET?

The typical on-state resistance is 550 mOhm at 4A and 10V.

What is the continuous drain current rating?

The continuous drain current is rated at 8A at 25°C case temperature.

What is the operating temperature range?

The operating and storage temperature range is -55°C to 150°C (TJ).

What package type is the NTD600N80S3Z supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.

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