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NTD5C688NLT4G The ON Semiconductor NTD5C688NLT4G is an N-Channel MOSFET designed for power applications. It offers a 60V drain-to-source voltage and low on-resistance.
Mfr Part #:

NTD5C688NLT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTD5C688NLT4G is an N-Channel MOSFET designed for power applications. It offers a 60V drain-to-source voltage and low on-resistance.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NTD5C688NLT4G Available from 1 distributor

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✓ Non-Authorised
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Braun Electronic Components ✓
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1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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NTD5C688NLT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
FET Type
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
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NTD5C688NLT4G Description

Short technical summary and product information.

The ON Semiconductor NTD5C688NLT4G is a single N-Channel Power MOSFET. It features a maximum drain-to-source voltage (VDSS) of 60V and a low on-resistance (RDS(on)) of 27.4 mOhm at 10A drain current and 10V gate-source voltage. The device can handle a continuous drain current of up to 17A at 25°C case temperature and 7.5A at 25°C ambient temperature.

 

This MOSFET is designed to minimize conduction and driver losses, making it suitable for various power switching applications. It operates over a wide temperature range from -55°C to 175°C. The component is housed in a surface-mount DPAK package (TO-252-3, SC-63), facilitating integration into compact designs.

 

Key electrical characteristics include a gate threshold voltage (VGS(th)) ranging from 1.2V to 2.1V at 250µA. The device also exhibits a pulsed drain current (IDM) of 77A and a single pulse avalanche energy (EAS) of 48 mJ. It is Pb-free and Halogen-free, complying with RoHS standards.

NTD5C688NLT4G Quick Information

Product Type: MOSFET
Series: NTD5C688NLT4G
Canonical Name: NTD5C688NL N-Channel MOSFET
Subcategory: Single

NTD5C688NLT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD5C688NLT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD5C688NLT4G Features

  • 60V drain-to-source voltage rating.
  • Low RDS(on) for minimal conduction losses.
  • 17A continuous drain current.
  • Surface mount DPAK package.
  • Pb-free and Halogen-free.

NTD5C688NLT4G Applications

  • Power switching applications.
  • Efficient power management circuits.
  • Low voltage drop applications.
  • Compact electronic designs.

NTD5C688NLT4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTD5C688NLT4G?

The maximum drain-to-source voltage (VDSS) is 60V.

What is the typical on-resistance of the NTD5C688NLT4G at 10V gate-source voltage?

The typical on-resistance (RDS(on)) is 27.4 mOhm when the gate-source voltage is 10V and the drain current is 10A.

What is the continuous drain current rating for the NTD5C688NLT4G at 25°C case temperature?

The continuous drain current rating is 17A at a case temperature of 25°C.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NTD5C688NLT4G supplied in?

It is supplied in a DPAK package, also known as TO-252-3, DPak (2 Leads + Tab), SC-63.

Is the NTD5C688NLT4G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NTD5C688NLT4G?

The Moisture Sensitivity Level is 1 Unlimited.

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