| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTD5C632NLT4G is a single N-Channel MOSFET manufactured by ON Semiconductor. It is designed with low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses. This device operates with a drain-to-source voltage of 60V and offers a low on-resistance of 2.5mOhm at 10V gate-source voltage. It can handle a continuous drain current of up to 155A at 25°C case temperature and 29A at 25°C ambient temperature.
The MOSFET is housed in a DPAK (TO-252-3, DPak) surface-mount package, making it suitable for space-constrained applications. It operates within a wide temperature range of -55°C to 175°C. The device is specified as Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Key electrical characteristics include a gate threshold voltage of 2.1V maximum at 250µA, an input capacitance of 5700pF at 25V, and a gate charge of 34nC at 4.5V. The maximum power dissipation is 115W at 25°C case temperature and 4W at 25°C ambient temperature. Thermal resistance from junction to case is 1.3°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum Rds(on) is 2.5mOhm when tested at 50A drain current and 10V gate-source voltage.
The continuous drain current is 155A at 25°C case temperature and 29A at 25°C ambient temperature.
The operating junction and storage temperature range is -55°C to 175°C.
It is an N-Channel MOSFET.
The device is supplied in a DPAK (TO-252-3, DPak) surface-mount package.
Yes, the device is RoHS3 Compliant.