NTD5865NT4G The On Semiconductor NTD5865NT4G is an N-Channel Power MOSFET designed for high current applications. It features a 60V drain-to-source voltage and a maximum continuous drain current of 43A.
Mfr Part #:

NTD5865NT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTD5865NT4G is an N-Channel Power MOSFET designed for high current applications. It features a 60V drain-to-source voltage and a maximum continuous drain current of 43A.
✓ Total Stock: 7,500 pcs
$ Price Range: $0.99

NTD5865NT4G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,500 pcs
7500 pcs On Request 1 On Request On Request On Request On Request On Request

NTD5865NT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD5865NT4G Description

Short technical summary and product information.

The NTD5865NT4G is an N-Channel Power MOSFET manufactured by On Semiconductor. This device offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current capability of 43A at 25°C case temperature. Its low on-resistance of 18mOhm at 20A and 10V gate drive makes it suitable for efficient power switching applications.

 

The MOSFET operates within a junction temperature range of -55°C to 175°C and has a power dissipation rating of 71W at 25°C. It is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, facilitating integration into compact designs.

 

Key electrical characteristics include an input capacitance of 1261pF and a gate charge of 23nC. The device is designed for fast switching and high current capability, with 100% avalanche tested for reliability. It is Pb-free, halogen-free, and RoHS compliant.

NTD5865NT4G Quick Information

Product Type: MOSFET
Series: NTD5865NT4G
Canonical Name: NTD5865NT4G N-Channel Power MOSFET
Subcategory: N-Channel

NTD5865NT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD5865NT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD5865NT4G Features

  • 60V drain-to-source voltage capability.
  • 43A maximum continuous drain current.
  • Low 18mOhm on-resistance at 20A.
  • Surface mount TO-252 DPAK package.
  • Pb-free and halogen-free construction.

NTD5865NT4G Applications

  • Suitable for high current switching.
  • Power supply unit designs.
  • Motor control circuits.
  • Automotive applications.

NTD5865NT4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTD5865NT4G?

The maximum drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 43A at 25°C case temperature.

What is the maximum on-resistance of the NTD5865NT4G?

The maximum on-resistance (Rds on) is 18mOhm when tested at 20A drain current and 10V gate voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NTD5865NT4G supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.

Is the NTD5865NT4G RoHS compliant?

Yes, the device is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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