NTD5807NT4G The ON Semiconductor NTD5807NT4G is an N-Channel MOSFET with a 40V drain-to-source voltage and a continuous drain current of 23A. It is designed for surface mounting.
Mfr Part #:

NTD5807NT4G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTD5807NT4G is an N-Channel MOSFET with a 40V drain-to-source voltage and a continuous drain current of 23A. It is designed for surface mounting.
✓ Total Stock: 3,010 pcs
$ Price Range: $0.99

NTD5807NT4G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,990 pcs
2990 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
20 pcs
20 pcs On Request 1 On Request On Request On Request On Request On Request

NTD5807NT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD5807NT4G Description

Short technical summary and product information.

The ON Semiconductor NTD5807NT4G is an N-Channel MOSFET utilizing Metal Oxide Semiconductor technology. It offers a drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current of 23A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 31mOhm at 5A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The device supports a gate drive voltage range of 4.5V to 10V and has a maximum gate-source voltage (Vgs Max) of ±20V. Input capacitance (Ciss) is specified at a maximum of 603pF at 25V, and gate charge (Qg) is 20nC at 10V.

 

With a maximum power dissipation of 33W (Tc), the NTD5807NT4G operates within a temperature range of -55°C to 175°C (TJ). It is housed in a DPAK package, specifically TO-252-3, DPak (2 Leads + Tab), SC-63, and is designed for surface mounting.

 

This MOSFET is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected. It is suitable for various electronic applications requiring efficient switching and power handling.

NTD5807NT4G Quick Information

Product Type: MOSFET
Canonical Name: NTD5807NT4G N-Channel MOSFET
Subcategory: MOSFETs - Single

NTD5807NT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD5807NT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD5807NT4G Features

  • N-Channel MOSFET technology.
  • 40V drain-to-source voltage rating.
  • 23A continuous drain current capability.
  • Low 31mOhm maximum on-resistance.
  • Surface mount DPAK package.

NTD5807NT4G Applications

  • Used in power switching circuits
  • Suitable for load control applications
  • Ideal for high-speed switching power supplies
  • Applicable in motor control modules

NTD5807NT4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTD5807NT4G?

The drain-to-source voltage (Vdss) for the NTD5807NT4G is 40V.

What is the continuous drain current of the NTD5807NT4G?

The continuous drain current (Id) at 25°C for the NTD5807NT4G is 23A.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 31mOhm at 5A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NTD5807NT4G in?

The NTD5807NT4G is supplied in a DPAK package, specifically TO-252-3, DPak (2 Leads + Tab), SC-63, and is designed for surface mounting.

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