| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,514 pcs
|
2514 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
288 pcs
|
288 pcs | On Request | 1 | On Request | On Request | 1238+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTD5407NT4G from ON Semiconductor is a single N-Channel Power MOSFET. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current of up to 38A at 25°C case temperature, and 7.6A at 25°C ambient temperature.
This MOSFET boasts a low on-resistance (Rds(on)) of 26mOhm maximum at 20A and 10V gate-source voltage, along with a typical on-resistance of 21mOhm at 10V. It has a gate charge (Qg) of 20nC maximum at 10V and a gate threshold voltage (Vgs(th)) of 3.5V maximum at 250µA.
Designed with MOSFET (Metal Oxide) technology, the NTD5407NT4G operates within a junction temperature range of -55°C to 175°C. It is housed in a surface-mount DPAK (TO-252-3) package, suitable for various electronic brake systems, electronic power steering, and bridge circuit applications.
The device supports a gate-to-source voltage (Vgs) of ±20V and has a maximum power dissipation of 75W at 25°C case temperature and 2.9W at 25°C ambient temperature. It is Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40V.
The continuous drain current is 38A when measured at the case temperature (Tc) of 25°C, and 7.6A when measured at the ambient temperature (Ta) of 25°C.
The typical on-resistance is 21 mOhm at a gate-source voltage of 10V.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, which is a surface mount type.
Yes, the device is RoHS3 Compliant.