NTD4979N-35G The ON Semiconductor NTD4979N-35G is an N-Channel MOSFET with a Drain-to-Source Voltage of 30V. It features a low on-resistance of 9mOhm at 30A, 10V.
Mfr Part #:

NTD4979N-35G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTD4979N-35G is an N-Channel MOSFET with a Drain-to-Source Voltage of 30V. It features a low on-resistance of 9mOhm at 30A, 10V.
✓ Total Stock: 40,200 pcs
$ Price Range: $0.99

NTD4979N-35G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
40,200 pcs
40200 pcs On Request 1 On Request On Request On Request On Request On Request

NTD4979N-35G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD4979N-35G Description

Short technical summary and product information.

The ON Semiconductor NTD4979N-35G is a single N-Channel Power MOSFET designed for applications requiring efficient power delivery. It offers a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current capability of up to 9.4A when measured at the ambient temperature (Ta) and 41A at the case temperature (Tc).

 

Key electrical characteristics include a low maximum On-Resistance (Rds(on)) of 9 mOhm at a gate-source voltage of 10V and a drain current of 30A. The device has a gate threshold voltage (Vgs(th)) of 2.5V at 250µA and a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is rated at a maximum of 837pF at 15V, and gate charge (Qg) is a maximum of 16.5nC at 10V.

 

This MOSFET operates within a junction temperature range of -55°C to +175°C. It is housed in a TO-251-3 Short Leads, IPak package, suitable for through-hole mounting. The device is Pb-free and Halogen-free, complying with RoHS standards.

NTD4979N-35G Quick Information

Product Type: MOSFET
Series: NTD4979N-35G
Canonical Name: NTD4979N-35G N-Channel MOSFET
Subcategory: N-Channel

NTD4979N-35G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NTD4979N-35G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD4979N-35G Features

  • 30V Drain-to-Source Voltage (Vdss)
  • 9.4A/41A Continuous Drain Current
  • 9mOhm Maximum On-Resistance
  • N-Channel MOSFET Technology
  • TO-251-3 Short Leads, IPak Package

NTD4979N-35G Applications

  • Used in power switching circuits
  • Suitable for load management applications
  • Ideal for high-efficiency power supplies
  • Applicable in automotive and industrial controls

NTD4979N-35G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-to-Source Voltage (Vdss) for the NTD4979N-35G?

The maximum Drain-to-Source Voltage (Vdss) is 30V.

What is the maximum continuous drain current?

The continuous drain current is 9.4A at 25°C ambient temperature (Ta) and 41A at 25°C case temperature (Tc).

What is the maximum On-Resistance (Rds(on))?

The maximum On-Resistance (Rds(on)) is 9 mOhm at 30A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to +175°C (TJ).

What package type is the NTD4979N-35G in?

The NTD4979N-35G is in a TO-251-3 Short Leads, IPak package.

Is this component RoHS compliant?

Yes, this component is RoHS3 Compliant.

Home
Account

Categories