| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,300 pcs
|
3300 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTD4960NT4G is an N-channel MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage of 30V and a maximum gate-to-source voltage of ±20V. The device is designed for switching applications requiring high current handling, with a continuous drain current of 8.9A and a pulsed current of 55A. The DPAK package allows for surface mounting on printed circuit boards, suitable for power management and motor control circuits. Its electrical characteristics make it appropriate for use in power supplies, motor drivers, and other high-current switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The maximum gate-to-source voltage (Vgs) is ±20V.
The gate threshold voltage (Vgs(th)) is 2.5V at 250µA.