NTD4909NT4G The ON Semiconductor NTD4909NT4G is an N-Channel MOSFET designed for power applications. It features a 30V drain-to-source voltage and a low on-resistance.
Mfr Part #:

NTD4909NT4G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTD4909NT4G is an N-Channel MOSFET designed for power applications. It features a 30V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 19,406 pcs
$ Price Range: $0.99

NTD4909NT4G Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
14,645 pcs
14645 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,761 pcs
4761 pcs On Request 1 On Request On Request 10+ On Request On Request

NTD4909NT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD4909NT4G Description

Short technical summary and product information.

The ON Semiconductor NTD4909NT4G is a single N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage of 30V and a maximum continuous drain current of 8.8A at ambient temperature and 41A at case temperature. The device boasts a low on-resistance of 8mOhm at 30A and 10V gate-source voltage, minimizing conduction losses. Its optimized gate charge minimizes switching losses, making it suitable for applications like CPU power delivery and DC-DC converters.

 

The MOSFET operates within a junction temperature range of -55°C to 175°C. It is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package, facilitating integration into compact designs. The device is rated for 30V drain-to-source voltage and ±20V gate-to-source voltage. Its technology is MOSFET (Metal Oxide), and it is classified as an N-Channel FET type.

NTD4909NT4G Quick Information

Product Type: MOSFET
Series: NTD4909N
Canonical Name: N-Channel MOSFET, 30V, 8.8A/41A, DPAK
Subcategory: N-Channel

NTD4909NT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD4909NT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD4909NT4G Features

  • 30V drain-to-source voltage rating.
  • Low 8mOhm Rds(on) at 30A.
  • High 41A continuous drain current.
  • Surface mount DPAK package.
  • Wide -55°C to 175°C operating temperature.

NTD4909NT4G Applications

  • Used in power switching circuits
  • Suitable for motor control applications
  • Ideal for power management modules
  • Surface mount design for compact assemblies

NTD4909NT4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTD4909NT4G?

The drain-to-source voltage (Vds) for the NTD4909NT4G is 30V.

What is the maximum continuous drain current of the NTD4909NT4G?

The NTD4909NT4G has a maximum continuous drain current of 8.8A at ambient temperature and 41A at case temperature.

What is the on-resistance (Rds(on)) of the NTD4909NT4G?

The maximum on-resistance (Rds(on)) for the NTD4909NT4G is 8mOhm when tested at 30A drain current and 10V gate-source voltage.

What is the operating temperature range for the NTD4909NT4G?

The NTD4909NT4G operates within a temperature range of -55°C to 175°C (TJ).

What package type is the NTD4909NT4G supplied in?

The NTD4909NT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package for surface mounting.

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