NTD4858NT4G The On Semiconductor NTD4858NT4G is an N-Channel MOSFET with a 25V drain-to-source voltage. It offers a continuous drain current of up to 73A (Tc) and a low on-resistance of 6.2mOhm.
Mfr Part #:

NTD4858NT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTD4858NT4G is an N-Channel MOSFET with a 25V drain-to-source voltage. It offers a continuous drain current of up to 73A (Tc) and a low on-resistance of 6.2mOhm.
✓ Total Stock: 739 pcs
$ Price Range: $0.99

NTD4858NT4G Available from 1 distributor

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NTD4858NT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD4858NT4G Description

Short technical summary and product information.

The NTD4858NT4G from On Semiconductor is a single N-Channel MOSFET designed for power applications. It features trench technology for low conduction and switching losses, with a drain-to-source voltage (Vdss) of 25V.

 

This MOSFET can handle a continuous drain current of 11.2A at 25°C ambient temperature and up to 73A at 25°C case temperature. Its maximum power dissipation is rated at 1.3W (Ta) and 54.5W (Tc). The on-resistance (Rds(on)) is as low as 6.2mOhm at 30A and 10V gate drive.

 

Designed for surface mounting, the NTD4858NT4G comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package. It operates within a junction temperature range of -55°C to 175°C. Key electrical characteristics include a gate charge of 19.2 nC at 4.5V and a gate threshold voltage of 2.5V at 250µA.

 

Applications for this MOSFET include VCORE, DC-DC converters, and high/low side switching. It is constructed using Metal Oxide Semiconductor technology.

NTD4858NT4G Quick Information

Product Type: MOSFET
Canonical Name: NTD4858NT4G N-Channel MOSFET
Subcategory: Power MOSFETs

NTD4858NT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD4858NT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD4858NT4G Features

  • N-Channel MOSFET with 25V drain-source voltage.
  • High continuous drain current up to 73A.
  • Low on-resistance of 6.2mOhm.
  • Surface mount DPAK package for easy integration.
  • Wide operating temperature range of -55°C to 175°C.

NTD4858NT4G Applications

  • Ideal for DC-DC converter designs.
  • Suitable for high-side switching.
  • Used in low-side switching circuits.
  • Applicable for VCORE power delivery.

NTD4858NT4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTD4858NT4G?

The drain-to-source voltage (Vdss) for the NTD4858NT4G is 25V.

What is the maximum continuous drain current of the NTD4858NT4G?

The NTD4858NT4G has a continuous drain current rating of 11.2A at 25°C ambient temperature and 73A at 25°C case temperature.

What is the on-resistance (Rds(on)) of the NTD4858NT4G?

The maximum on-resistance (Rds(on)) for the NTD4858NT4G is 6.2mOhm when measured at 30A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The NTD4858NT4G operates within a junction temperature range of -55°C to 175°C.

What package type is the NTD4858NT4G supplied in?

The NTD4858NT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.

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