| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTD4810NT4G from ON Semiconductor is a single N-Channel Power MOSFET designed for applications such as CPU power delivery and DC-DC converters. It features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 9A when measured at the ambient temperature (Ta) and 54A when measured at the case temperature (Tc).
This MOSFET boasts a low on-resistance of 10mOhm at a drain current of 30A and gate-to-source voltage of 10V, minimizing conduction losses. The gate charge (Qg) is 11nC at 4.5V, and the input capacitance (Ciss) is 1350pF at 12V, contributing to efficient switching.
With a maximum power dissipation of 1.4W (Ta) and 50W (Tc), and an operating temperature range of -55°C to 175°C, the NTD4810NT4G is suitable for demanding environments. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.
The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 9A at ambient temperature and 54A at case temperature.
The maximum on-resistance is 10mOhm at a drain current of 30A and gate-to-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package for surface mounting.
Yes, the RoHS status is RoHS3 Compliant.