NTD4809NT4G The On Semiconductor NTD4809NT4G is an N-Channel MOSFET designed for power applications. It features a 30V drain-to-source voltage and a surface mount package.
Mfr Part #:

NTD4809NT4G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTD4809NT4G is an N-Channel MOSFET designed for power applications. It features a 30V drain-to-source voltage and a surface mount package.
✓ Total Stock: 25,136 pcs
$ Price Range: $0.99

NTD4809NT4G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
24,000 pcs
24000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,136 pcs
1136 pcs On Request 1 On Request On Request 10+ On Request On Request

NTD4809NT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD4809NT4G Description

Short technical summary and product information.

The On Semiconductor NTD4809NT4G is a single N-Channel MOSFET belonging to the Metal Oxide Semiconductor technology family. It is designed for power applications and offers a drain-to-source voltage (Vdss) of 30V.

 

Key electrical characteristics include a maximum continuous drain current of 9.6A at ambient temperature and 58A at case temperature, with a low on-resistance of 9mOhm at 30A and 10V. The gate charge (Qg) is 25nC at 11.5V, and the gate threshold voltage (Vgs(th)) is 2.5V at 250µA. The operating temperature range is from -55°C to 175°C.

 

This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. The maximum power dissipation is 1.4W at ambient temperature and 52W at case temperature. It is rated for a gate-source voltage of ±20V.

 

This component is suitable for various power switching and control applications where efficient power management is required.

NTD4809NT4G Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Single

NTD4809NT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD4809NT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD4809NT4G Features

  • N-Channel MOSFET technology
  • 30V Drain-to-Source Voltage (Vdss)
  • Low On-Resistance: 9mOhm @ 30A, 10V
  • Surface Mount DPAK package
  • Wide operating temperature range

NTD4809NT4G Applications

  • Power switching applications
  • Voltage regulation circuits
  • Load management
  • DC-DC converters

NTD4809NT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the NTD4809NT4G?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the maximum input capacitance (Ciss) at Vds = 12V?

The maximum input capacitance (Ciss) is 1456 pF at Vds = 12V.

What is the maximum gate charge (Qg) at Vgs = 11.5V?

The maximum gate charge (Qg) is 25 nC at Vgs = 11.5V.

What is the maximum gate-source voltage (Vgs)?

The maximum gate-source voltage (Vgs) is ±20V.

What is the operating temperature range of the NTD4809NT4G?

The operating temperature range is from -55°C to 175°C.

What package does the NTD4809NT4G come in?

It comes in a TO-252-3, DPAK surface-mount package.

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