| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,083 pcs
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2083 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NTD360N65S3H is a power MOSFET with an N-Channel configuration, utilizing Metal Oxide technology. It is designed for efficient power switching applications, offering a high drain-source breakdown voltage of 650V.
Key electrical specifications include a maximum continuous drain current of 10A (Tc) and a drain-source on-resistance of 360mOhm at 5A and 10V. The gate charge is specified at 17.5nC (Max) @ 10V, with a gate-source threshold voltage of 4V @ 700µA. The device operates within a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mount applications. The power dissipation is rated at 83W (Tc). The maximum gate-source voltage is ±30V.
This component is part of the SUPERFET III series, offering fast switching characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 650 V.
The maximum continuous drain current is 10 A.
The maximum drain-source on-resistance is 360 mOhm at 5A, 10V.
The operating temperature range is -55°C to 150°C.
This MOSFET is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
This MOSFET is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.