| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number NTD32N06LT4G from ON Semiconductor, is designed for surface mount applications in a DPAK package. It offers a drain-to-source voltage (Vdss) of 60V and can handle a continuous current of 32A. The Rds On resistance is a maximum of 28mOhm at 16A and 5V gate-source voltage. The device operates within a temperature range of -55°C to 175°C (TJ).
Key electrical characteristics include an input capacitance (Ciss) of 1700 pF at 25V and a gate charge (Qg) of 50 nC at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V. The MOSFET technology is Metal Oxide.
With a power dissipation of 1.5W (Ta) and 93.75W (Tj), this MOSFET is suitable for various power switching applications. The package type is TO-252-3, DPak (2 Leads + Tab), SC-63, with surface mount technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The continuous current rating is 32A.
The Rds On is a maximum of 28mOhm at 16A and 5Vgs.
The operating temperature range is -55°C to 175°C (TJ).
It is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
It is a surface mount device.