NTD3055L170G The ON Semiconductor NTD3055L170G is an N-Channel MOSFET designed for high-speed switching applications. It features a 60V drain-to-source voltage and a 9A continuous drain current.
Mfr Part #:

NTD3055L170G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTD3055L170G is an N-Channel MOSFET designed for high-speed switching applications. It features a 60V drain-to-source voltage and a 9A continuous drain current.
✓ Total Stock: 2,373 pcs
$ Price Range: $0.99

NTD3055L170G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,333 pcs
2333 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
40 pcs
40 pcs On Request 1 On Request On Request 07+ On Request On Request

NTD3055L170G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD3055L170G Description

Short technical summary and product information.

The ON Semiconductor NTD3055L170G is a power MOSFET designed for low voltage, high-speed switching applications. It is an N-Channel, Logic Level MOSFET with a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current of 9A at 25°C.

 

Key electrical characteristics include a maximum On-State Resistance (Rds On) of 170mOhm at 4.5A and 5V gate-to-source voltage, and a maximum gate threshold voltage of 2V at 250µA. The device operates within a temperature range of -55°C to 175°C (TJ).

 

This MOSFET is available in a DPAK (TO-252-3) surface mount package, making it suitable for various power supply, converter, and power motor control applications. The NVD prefix variant is AEC-Q101 qualified and PPAP capable for automotive requirements.

 

It is a Pb-Free device, indicating compliance with environmental regulations. The device is designed for efficient power management in demanding applications.

NTD3055L170G Quick Information

Product Type: MOSFET
Series: NTD3055L170G
Canonical Name: N-Channel Logic Level Power MOSFET
Subcategory: N-Channel

NTD3055L170G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NTD3055L170G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD3055L170G Features

  • N-Channel Logic Level Power MOSFET
  • 60V Drain-to-Source Voltage
  • 9A Continuous Drain Current
  • 170mOhm Max On-Resistance
  • DPAK Surface Mount Package

NTD3055L170G Applications

  • Designed for power supplies
  • Used in converters
  • Suitable for power motor controls
  • Applicable for bridge circuits

NTD3055L170G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTD3055L170G?

The maximum drain-to-source voltage (Vdss) is 60 Vdc.

What is the continuous drain current at 25°C for this MOSFET?

The continuous drain current (ID) at TA = 25°C is 9.0 Adc.

What is the operating temperature range of the NTD3055L170G?

The operating and storage temperature range is -55°C to 175°C (TJ).

What package type is the NTD3055L170G MOSFET supplied in?

It is supplied in a DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) surface mount package.

Is the NTD3055L170G a Pb-Free device?

Yes, the NTD3055L170G is a Pb-Free device.

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