NTD3055L104-1G The On Semiconductor NTD3055L104-1G is an N-Channel MOSFET designed for high-speed switching applications. It features a 60V drain-source voltage and 12A continuous current capability.
Mfr Part #:

NTD3055L104-1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTD3055L104-1G is an N-Channel MOSFET designed for high-speed switching applications. It features a 60V drain-source voltage and 12A continuous current capability.
✓ Total Stock: 48,750 pcs
$ Price Range: $0.99

NTD3055L104-1G Available from 1 distributor

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✓ Non-Authorised
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NTD3055L104-1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD3055L104-1G Description

Short technical summary and product information.

The NTD3055L104-1G from On Semiconductor is an N-Channel Power MOSFET designed for low voltage, high-speed switching applications. It is suitable for use in power supplies, converters, and power motor controls.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 12A at 25°C ambient temperature. The on-resistance (Rds(on)) is specified at a maximum of 104mOhm at 6A and 5V gate-source voltage. The gate threshold voltage (Vgs(th)) is 2V at 250µA, and the continuous gate-to-source voltage (Vgs) is ±15V.

 

This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in an IPAK package, also known as TO-251-3 Short Leads or TO-251AA, and is designed for through-hole mounting.

 

The device offers features such as lower Rds(on), lower Vds(on), and tighter Vsd specifications, contributing to improved efficiency in switching applications. It is also Pb-Free and RoHS compliant.

NTD3055L104-1G Quick Information

Product Type: MOSFET
Series: NTD3055L104-1G
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NTD3055L104-1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD3055L104-1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD3055L104-1G Features

  • N-Channel MOSFET for power switching.
  • 60V drain-source voltage rating.
  • 12A continuous drain current.
  • Low 104mOhm Rds(on) at 6A.
  • IPAK package for through-hole mounting.

NTD3055L104-1G Applications

  • Used in power supplies.
  • Suitable for converters.
  • Applied in power motor controls.
  • Designed for bridge circuits.

NTD3055L104-1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTD3055L104-1G?

The maximum drain-to-source voltage (Vdss) is 60 Vdc.

What is the continuous drain current rating?

The continuous drain current (Id) is 12A at 25°C ambient temperature.

What is the typical on-resistance (Rds(on))?

The Rds(on) is a maximum of 104mOhm when measured at 6A drain current and 5V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C.

What package type is the NTD3055L104-1G supplied in?

It is supplied in an IPAK package, also referred to as TO-251-3 Short Leads or TO-251AA.

How is the NTD3055L104-1G mounted?

This component is designed for through-hole mounting.

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