NTD2955G The NTD2955G is a P-Channel MOSFET from ON Semiconductor designed for low-voltage, high-speed switching applications. It features a 60V drain-source voltage and 12A continuous current rating.
Mfr Part #:

NTD2955G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTD2955G is a P-Channel MOSFET from ON Semiconductor designed for low-voltage, high-speed switching applications. It features a 60V drain-source voltage and 12A continuous current rating.
✓ Total Stock: 29,558 pcs
$ Price Range: $0.99

NTD2955G Available from 4 distributors

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✓ Non-Authorised

NTD2955G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD2955G Description

Short technical summary and product information.

The NTD2955G is a P-Channel Power MOSFET manufactured by ON Semiconductor. It is designed for low-voltage, high-speed switching applications, including power supplies, converters, and power motor controls. This MOSFET is particularly suitable for bridge circuits where diode speed and commutating safe operating areas are critical.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of -60V and a continuous drain current (Id) of -12A at 25°C. The gate-to-source voltage (Vgs) is ±20V continuous. The static drain-source on-resistance (Rds(on)) is a maximum of 180mOhm at 6A and 10V. Input capacitance (Ciss) is 750pF at 25V, and gate charge (Qg) is 30nC at 10V.

 

This device operates within a temperature range of -55°C to 175°C. It has a total power dissipation of 55W at 25°C. Thermal resistance from junction-to-case is 2.73°C/W, and junction-to-ambient is 71.4°C/W when surface mounted to an FR4 board with a 1-inch pad size.

 

The NTD2955G is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. It is RoHS compliant and Pb-free.

NTD2955G Quick Information

Product Type: MOSFET
Series: NTD2955G
Canonical Name: NTD2955G P-Channel MOSFET
Subcategory: P-Channel

NTD2955G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD2955G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD2955G Features

  • P-Channel MOSFET for high-speed switching.
  • 60V drain-source voltage rating.
  • 12A continuous drain current.
  • Surface mount DPAK package.
  • Wide operating temperature range.

NTD2955G Applications

  • Suitable for power supply converters.
  • Used in power motor controls.
  • Ideal for bridge circuit applications.
  • Designed for high energy applications.

NTD2955G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the NTD2955G?

The drain-to-source voltage (Vdss) for the NTD2955G is -60V.

What is the continuous drain current for the NTD2955G?

The continuous drain current for the NTD2955G is -12A at 25°C.

What is the operating temperature range of the NTD2955G?

The operating temperature range for the NTD2955G is -55°C to 175°C.

What package type is the NTD2955G available in?

The NTD2955G is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is the NTD2955G RoHS compliant?

Yes, the NTD2955G is RoHS3 compliant.

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