| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTD20N03L27G from ON Semiconductor is a logic-level vertical power MOSFET designed for general-purpose applications. It features a low Rds(on) of 27mOhm at 10A and 5Vgs, making it efficient for power switching.
This N-Channel MOSFET has a maximum drain-to-source voltage (Vds) of 30V and a continuous drain current (Id) of 20A at 25°C ambient temperature. The gate-to-source voltage (Vgs) is rated for ±20V continuous operation. It offers a high avalanche energy rating of 288 mJ, suitable for designs with inductive loads.
The device operates within a temperature range of -55°C to 150°C. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. The DPAK package provides good thermal performance with a junction-to-case thermal resistance of 1.67°C/W.
Typical applications include power supplies, inductive loads, and PWM motor controls. This MOSFET is also noted as a replacement for the MTD20N03L in many applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 30 Vdc.
The continuous drain current (Id) is 20 Adc at 25°C ambient temperature.
The maximum on-resistance (Rds(on)) is 27mOhm at 10A drain current and 5V gate-source voltage.
The operating and storage temperature range is -55°C to 150°C.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, the RoHS status is RoHS3 Compliant.