NTD18N06T4G The ON Semiconductor NTD18N06T4G is an N-Channel MOSFET designed for amplification. It features a 60V drain-source voltage and 18A continuous current capability.
Mfr Part #:

NTD18N06T4G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTD18N06T4G is an N-Channel MOSFET designed for amplification. It features a 60V drain-source voltage and 18A continuous current capability.
✓ Total Stock: 4,376 pcs
$ Price Range: $0.99

NTD18N06T4G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,876 pcs
1876 pcs On Request 1 On Request On Request 12+ On Request On Request

NTD18N06T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD18N06T4G Description

Short technical summary and product information.

The NTD18N06T4G from ON Semiconductor is an N-Channel Power MOSFET suitable for various amplification applications. It is designed with a maximum drain-source voltage of 60V and can handle a continuous drain current of 18A.

 

Key electrical characteristics include a maximum drain-source on-resistance of 60mOhm at 9A and 10V Vgs, and an input capacitance of 710pF at 25V. The MOSFET operates with a gate-to-source voltage range of ±20V and has a gate threshold voltage of 4V at 250µA.

 

This component is housed in a TO-252-3 DPAK surface-mount package, facilitating efficient board assembly. It operates across a wide temperature range from -55°C to 175°C (TJ), with a maximum power dissipation of 55W (Tj) or 2.1W (Ta).

 

The NTD18N06T4G is manufactured using MOSFET (Metal Oxide) technology and is RoHS3 compliant.

NTD18N06T4G Quick Information

Product Type: MOSFET
Canonical Name: NTD18N06T4G N-Channel MOSFET
Subcategory: N-Channel

NTD18N06T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

NTD18N06T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD18N06T4G Features

  • N-Channel MOSFET for amplification.
  • 60V drain-source voltage rating.
  • 18A continuous drain current capability.
  • Low 60mOhm Rds On (max).
  • Surface mount TO-252-3 DPAK package.

NTD18N06T4G Applications

  • Suitable for power switching circuits.
  • Used in general purpose amplification.
  • Ideal for DC-DC converters.
  • Applicable in motor control circuits.

NTD18N06T4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTD18N06T4G?

The maximum drain-source voltage is 60V.

What is the continuous drain current rating?

The continuous drain current is 18A.

What is the Rds On (Max) at specified conditions?

The Rds On is 60mOhm at 9A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NTD18N06T4G supplied in?

It is supplied in a TO-252-3 DPAK package for surface mounting.

Is this MOSFET RoHS compliant?

Yes, this component is RoHS3 Compliant.

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