| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number NTD12N10T4G from ON Semiconductor, is designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at 25°C ambient temperature.
The device exhibits a maximum Rds On of 165mOhm when conducting 6A with a 10V gate-source voltage. Key electrical characteristics include an input capacitance (Ciss) of 550 pF at 25V and a gate charge (Qg) of 20 nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA.
Operating within a temperature range of -55°C to 175°C (TJ), the NTD12N10T4G is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. The total power dissipation is rated at 1.28W at 25°C ambient and 56.6W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100V.
It comes in a TO-252-3, DPAK surface-mount package.
The maximum gate-to-source voltage is ±20V.
The continuous drain current at 25°C is 12A.
The maximum operating temperature is 175°C.
Yes, it is RoHS3 compliant.