NTD12N10G The On Semiconductor NTD12N10G is an N-Channel MOSFET with a 100V drain-to-source voltage and 12A continuous drain current. It features a low Rds On of 165mOhm at 6A and 10V.
Mfr Part #:

NTD12N10G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTD12N10G is an N-Channel MOSFET with a 100V drain-to-source voltage and 12A continuous drain current. It features a low Rds On of 165mOhm at 6A and 10V.
✓ Total Stock: 125 pcs
$ Price Range: $0.99

NTD12N10G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
125 pcs
125 pcs On Request 1 On Request On Request 1118+ On Request On Request

NTD12N10G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD12N10G Description

Short technical summary and product information.

The On Semiconductor NTD12N10G is a power MOSFET designed for applications requiring efficient switching. It features an N-Channel enhancement-mode construction with a maximum drain-to-source voltage of 100V and a continuous drain current rating of 12A at 25°C ambient temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 165mOhm at 6A and 10V gate-source voltage, and a gate threshold voltage of 4V at 250µA. The device also offers a gate-to-source voltage range of ±20V and an input capacitance of 550pF at 25V.

 

This MOSFET is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. It operates within a wide temperature range of -55°C to 175°C. The datasheet specifies an avalanche energy rating of 75mJ and provides thermal resistance values for junction-to-case and junction-to-ambient.

 

Typical applications for the NTD12N10G include PWM motor controls, power supplies, and converters. It is designed with features such as comparable source-to-drain diode recovery time and specified IDSS and Rds(on) at elevated temperatures.

NTD12N10G Quick Information

Product Type: MOSFET
Series: NTD12N10G
Canonical Name: NTD12N10G N-Channel MOSFET
Subcategory: N-Channel

NTD12N10G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD12N10G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD12N10G Features

  • 100V drain-to-source voltage rating.
  • 12A continuous drain current capability.
  • Low Rds On of 165mOhm at 6A, 10V.
  • N-Channel MOSFET technology.
  • TO-252 surface mount package.

NTD12N10G Applications

  • Used in power switching circuits
  • Suitable for motor control applications
  • Ideal for power supply regulation
  • Designed for high-voltage industrial use

NTD12N10G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTD12N10G?

The drain-to-source voltage (Vdss) is 100 Vdc.

What is the maximum gate-to-source voltage for this MOSFET?

The maximum gate-to-source voltage (Vgs) is ±20 Vdc.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current (Id) at 25°C is 12A.

What package type does the NTD12N10G come in?

It comes in a TO-252-3, DPAK surface-mount package.

What is the operating temperature range of this MOSFET?

The operating and storage temperature range is from -55°C to +175°C.

Is the NTD12N10G RoHS compliant?

It is RoHS3 compliant, but this status is unverified.

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