NTD110N02RT4G The On Semiconductor NTD110N02RT4G is an N-Channel MOSFET designed for power applications. It features a 24V drain-to-source voltage and a continuous current rating of 110A.
Mfr Part #:

NTD110N02RT4G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTD110N02RT4G is an N-Channel MOSFET designed for power applications. It features a 24V drain-to-source voltage and a continuous current rating of 110A.
✓ Total Stock: 2,205 pcs
$ Price Range: $0.99

NTD110N02RT4G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,369 pcs
1369 pcs On Request 1 On Request On Request 46+20+ On Request On Request
Non-Authorised Inventory information
836 pcs
836 pcs On Request 1 On Request On Request On Request On Request On Request

NTD110N02RT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD110N02RT4G Description

Short technical summary and product information.

This N-Channel MOSFET from On Semiconductor, part number NTD110N02RT4G, is built using the Planar HD3e Process for efficient switching performance. It offers a low RDS(on) to minimize conduction losses and low Ciss for reduced driver loss. The device is optimized for high-side switching requirements in high-efficiency DC-DC converters.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 24V, a continuous drain current of 110A at 25°C case temperature, and a maximum on-resistance (Rds(on)) of 4.6mOhm at 20A and 10Vgs. The gate-to-source voltage is rated at ±20V, with a gate threshold voltage of 2V at 250µA.

 

The NTD110N02RT4G operates within a temperature range of -55°C to 175°C. It is housed in a DPAK (TO-252-3) surface-mount package, suitable for various power management applications. The device is Pb-Free and RoHS Compliant.

NTD110N02RT4G Quick Information

Product Type: MOSFET
Series: NTD110N02RT4G
Canonical Name: NTD110N02RT4G N-Channel MOSFET
Subcategory: N-Channel

NTD110N02RT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD110N02RT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD110N02RT4G Features

  • 24V drain-to-source voltage rating.
  • 110A continuous drain current.
  • Low Rds(on) of 4.6mOhm.
  • Surface mount DPAK package.
  • Optimized for DC-DC converters.

NTD110N02RT4G Applications

  • Power switching in consumer electronics
  • Motor control circuits
  • Automotive power management
  • Industrial power supplies

NTD110N02RT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTD110N02RT4G?

The drain-to-source voltage (Vdss) is 24V.

What is the continuous drain current of the NTD110N02RT4G?

The continuous drain current is 110A when measured at the case temperature of 25°C.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds(on)) is 4.6mOhm at a drain current of 20A and gate-source voltage of 10V.

What is the operating temperature range for the NTD110N02RT4G?

The operating temperature range is -55°C to 175°C.

What package type is the NTD110N02RT4G supplied in?

It is supplied in a DPAK surface mount package.

Is the NTD110N02RT4G RoHS compliant?

Yes, the NTD110N02RT4G is RoHS3 Compliant.

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