| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,487 pcs
|
25487 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTC040N120SC1 is a Silicon Carbide (SiC) MOSFET, utilizing advanced technology for superior switching performance and reliability compared to traditional silicon. This device features a high breakdown voltage of 1200V and a low on-resistance (Rds(on)) of 56mOhm at 35A and 20V gate drive.
Key electrical characteristics include a continuous drain current of 60A at 25°C case temperature, a maximum power dissipation of 348W, and an input capacitance of 1781pF. The operating temperature range is -55°C to 175°C, making it suitable for demanding environments.
This MOSFET is supplied as a bare die, intended for surface mounting. Its SiC technology enables higher efficiency, faster operation frequency, increased power density, reduced EMI, and smaller system size, making it ideal for applications such as industrial motor drives, UPS systems, boost inverters, and PV chargers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the NTC040N120SC1 is 1200 V.
The typical on-resistance (Rds(on)) is 40 mOhm at a gate-source voltage of 20V and a drain current of 40A.
The operating junction and storage temperature range is -55°C to 175°C.
This MOSFET is supplied as a bare die.
The maximum continuous drain current is 60A at a case temperature of 25°C.
Key applications include industrial motor drives, UPS systems, boost inverters, and PV chargers.