NTBS9D0N10MC The On Semiconductor NTBS9D0N10MC is an N-Channel MOSFET with a 100V drain-to-source voltage and a continuous drain current of 60A (Tc). It features low RDS(on) and is housed in a TO-263 package.
Mfr Part #:

NTBS9D0N10MC

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTBS9D0N10MC is an N-Channel MOSFET with a 100V drain-to-source voltage and a continuous drain current of 60A (Tc). It features low RDS(on) and is housed in a TO-263 package.
✓ Total Stock: 1,049 pcs
$ Price Range: $0.99

NTBS9D0N10MC Available from 1 distributor

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✓ Non-Authorised
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NTBS9D0N10MC Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTBS9D0N10MC Description

Short technical summary and product information.

The NTBS9D0N10MC from On Semiconductor is a single N-Channel MOSFET designed for efficient power management. It offers a high drain-to-source voltage rating of 100V and can handle a continuous drain current of up to 60A at 25°C case temperature, or 14A at 25°C ambient temperature. The device boasts a low on-resistance (RDS(on)) of 9mOhm at 23A and 10V gate-source voltage, minimizing conduction losses.

 

Key electrical characteristics include a gate threshold voltage of 4V (max) at 131µA and a gate charge (Qg) of 23nC (max) at 10V. The MOSFET operates within a wide temperature range of -55°C to 175°C (TJ).

 

Packaged in a surface-mount TO-263-3, D²Pak configuration, the NTBS9D0N10MC is suitable for applications requiring compact and efficient power switching. Its features like low RDS(on) and low gate charge contribute to reduced conduction and driver losses, making it suitable for power tools, battery-operated vacuums, UAV/drones, and home automation systems.

NTBS9D0N10MC Quick Information

Product Type: MOSFET
Series: NTBS9D0N10MC
Canonical Name: NTBS9D0N10MC N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

NTBS9D0N10MC Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTBS9D0N10MC Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTBS9D0N10MC Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Handles 60A continuous drain current (Tc).
  • Low 9mOhm maximum Rds(on) at 10V.
  • Surface mount TO-263 (D²Pak) package.
  • Pb-Free and Halogen Free compliant.

NTBS9D0N10MC Applications

  • Suitable for power tools.
  • Used in battery-operated vacuums.
  • Ideal for UAV/drones.
  • Applicable in material handling.
  • Designed for BMS/storage systems.

NTBS9D0N10MC FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

The drain-to-source voltage (Vdss) is 100 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 60 A at 25°C case temperature and 14 A at 25°C ambient temperature.

What is the Rds On (Max) value?

The maximum Rds On is 9 mOhm when the drain current is 23A and the gate-source voltage is 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What is the package type?

The package is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Is this product RoHS compliant?

Yes, this device is RoHS3 Compliant.

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