| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,200 pcs
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7200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NTBS2D7N06M7 is an N-Channel PowerTrench MOSFET designed for industrial applications. It offers a robust 60V drain-to-source breakdown voltage and a high continuous drain current capability of 110A at 25°C.
Key electrical characteristics include a low on-resistance of 2.7mOhm at 80A and 10V gate drive voltage, and a maximum gate charge of 110nC. The MOSFET operates within a wide temperature range of -55°C to 175°C.
Packaged in a surface-mount TO-263-3 (D²Pak) package, the NTBS2D7N06M7 is suitable for various industrial power supply, motor drive, and energy storage applications. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
This device is RoHS3 compliant and has a Moisture Sensitivity Level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTBS2D7N06M7 is 60V.
The continuous drain current (Id) for the NTBS2D7N06M7 is 110A at 25°C.
The Rds(on) of the NTBS2D7N06M7 at 80A and 10V is 2.7mOhm.
The operating temperature range for the NTBS2D7N06M7 is -55°C to 175°C (TJ).
The NTBS2D7N06M7 MOSFET is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
Yes, the NTBS2D7N06M7 is RoHS3 compliant.