| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,070 pcs
|
1070 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTBG160N120SC1 is a high-voltage SICFET N-Channel MOSFET manufactured by On Semiconductor. It features a voltage rating of 1200V and a continuous drain current of 19.5A, suitable for power switching and high-voltage applications. The device is packaged in a D2PAK form factor, which allows for efficient surface mounting and heat dissipation. Its design enables reliable operation in demanding environments such as power supplies, motor drives, and industrial equipment.
This MOSFET is optimized for high-voltage switching with low on-resistance and fast switching capabilities. Its robust construction ensures durability and performance in high-voltage circuits. The D2PAK package provides a compact footprint with good thermal management, making it suitable for applications requiring high power density.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating voltage is 1200V.
It uses a D2PAK package.
The continuous drain current is 19.5A.