NTBG060N065SC1 The On Semiconductor NTBG060N065SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It offers a 650V drain-source voltage and a low Rds(on) of 70mOhm at 20A, 10V.
Mfr Part #:

NTBG060N065SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTBG060N065SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It offers a 650V drain-source voltage and a low Rds(on) of 70mOhm at 20A, 10V.
✓ Total Stock: 4,749 pcs
$ Price Range: $8.04

NTBG060N065SC1 Available from 1 distributor

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✓ Non-Authorised
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NTBG060N065SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTBG060N065SC1 Description

Short technical summary and product information.

The On Semiconductor NTBG060N065SC1 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET designed for demanding applications. It features a maximum drain-to-source voltage (Vdss) of 650V and a low on-resistance (Rds(on)) of 70mOhm at a drain current (Id) of 20A and gate-source voltage (Vgs) of 10V. The device also exhibits a typical Rds(on) of 44mOhm at 18V Vgs.

 

With a continuous drain current rating of 46A at 25°C case temperature and a maximum power dissipation of 170W, this MOSFET is suitable for high-power applications. It operates across a wide temperature range from -55°C to 175°C.

 

The NTBG060N065SC1 is housed in a D2PAK-7L surface-mount package, offering efficient thermal performance. Key electrical characteristics include an input capacitance (Ciss) of 1473 pF and a total gate charge (Qg) of 74 nC.

 

Typical applications for this SiC MOSFET include switching mode power supplies (SMPS), solar inverters, uninterruptible power supplies (UPS), and energy storage systems. Its robust construction and advanced SiC technology enable higher efficiency and power density in these systems.

NTBG060N065SC1 Quick Information

Product Type: MOSFET
Series: NTBG060N065SC1
Canonical Name: NTBG060N065SC1 Silicon Carbide MOSFET
Subcategory: Single

NTBG060N065SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTBG060N065SC1 Estimated Pricing

Qty Low High
1+ $8.04 $8.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTBG060N065SC1 Features

  • 650V drain-to-source voltage rating.
  • Low 70mOhm Rds(on) at 20A, 10V.
  • 74nC total gate charge for fast switching.
  • 170W maximum power dissipation.
  • D2PAK-7L surface-mount package.

NTBG060N065SC1 Applications

  • Ideal for switching mode power supplies.
  • Suitable for solar inverter designs.
  • Used in uninterruptible power supplies.
  • Applicable for energy storage systems.

NTBG060N065SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTBG060N065SC1?

The maximum drain-to-source voltage (Vdss) is 650 V.

What is the typical Rds(on) of the NTBG060N065SC1 at 18V Vgs?

The typical Rds(on) is 44 mOhm at 18V Vgs.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current at 25°C is 46 A.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTBG060N065SC1 supplied in?

The device is supplied in a D2PAK-7L package.

Is the NTBG060N065SC1 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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