| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,070 pcs
|
1070 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The On Semiconductor NTBG045N065SC1 is an N-Channel Silicon Carbide (SiC) MOSFET, part of the EliteSiC family. It offers a high drain-to-source voltage rating of 650V and a maximum on-resistance of 50mOhm at 25A and 18V gate-source voltage. The device boasts a typical on-resistance of 31mOhm at 25A and 18V, and 45mOhm at 25A and 15V.
Key electrical characteristics include a continuous drain current of 62A at 25°C (Tc) and 44A at 100°C (Tc), with a maximum power dissipation of 242W at 25°C (Tc). It features low gate charge (Qg) of 105 nC and low effective output capacitance (Coss) of 168 pF. The operating temperature range is -55°C to 175°C.
This MOSFET is housed in a D2PAK-7L surface-mount package, suitable for various power supply applications. It is designed for use in switching mode power supplies (SMPS), solar inverters, uninterruptible power supplies (UPS), and energy storage systems. The device is also 100% avalanche tested and RoHS compliant.
Mounting is surface mount. The operating temperature range is -55°C to 175°C (TJ). The technology used is Silicon Carbide (SiCFET). The FET type is N-Channel. The gate threshold voltage is a maximum of 4.3V at 8mA. The gate-to-source voltage can range from -8V to +22V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 650 V.
The maximum on-resistance is 50 mOhm at 25A and 18V.
The continuous drain current is 62A at 25°C (Tc).
The operating temperature range is -55°C to 175°C (TJ).
It uses Silicon Carbide (SiCFET) technology.
It is supplied in a D2PAK-7L package.
The device is RoHS3 Compliant.