NTBG040N120SC1 The On Semiconductor NTBG040N120SC1 is an N-Channel Silicon Carbide MOSFET designed for high-performance applications. It offers a 1200V drain-to-source voltage and 60A continuous drain current.
Mfr Part #:

NTBG040N120SC1

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTBG040N120SC1 is an N-Channel Silicon Carbide MOSFET designed for high-performance applications. It offers a 1200V drain-to-source voltage and 60A continuous drain current.
✓ Total Stock: 77,800 pcs
$ Price Range: $0.99

NTBG040N120SC1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
76,800 pcs
76800 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

NTBG040N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTBG040N120SC1 Description

Short technical summary and product information.

The On Semiconductor NTBG040N120SC1 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET. It features a maximum drain-to-source voltage of 1200V and a continuous drain current of 60A at 25°C case temperature, with a maximum power dissipation of 357W.

 

Key electrical characteristics include a typical on-resistance of 40 mOhm and ultra-low gate charge (Typ. QG(tot) = 106 nC). The device operates within a junction temperature range of -55°C to 175°C and is housed in a surface-mount D2PAK-7 package.

 

Typical applications for this MOSFET include UPS systems, DC-DC converters, and boost inverters, where its SiC technology provides advantages in efficiency and power density.

NTBG040N120SC1 Quick Information

Product Type: N-Channel Silicon Carbide MOSFET
Series: NTBG040N120SC1
Canonical Name: On Semiconductor NTBG040N120SC1 N-Channel Silicon Carbide MOSFET
Subcategory: Single FETs, MOSFETs

NTBG040N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NTBG040N120SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTBG040N120SC1 Features

  • 1200V drain-to-source voltage rating.
  • 60A continuous drain current capability.
  • Low on-resistance of 56mOhm.
  • High power dissipation of 357W.
  • Silicon Carbide (SiC) MOSFET technology.

NTBG040N120SC1 Applications

  • Suitable for high-voltage power switching applications.
  • Ideal for DC-DC converters and inverters.
  • Used in industrial motor control circuits.
  • Applicable in uninterruptible power supplies (UPS).

NTBG040N120SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTBG040N120SC1?

The maximum drain-to-source voltage is 1200 V.

What is the continuous drain current at 25°C?

The continuous drain current is 60A (Tc).

What is the typical on-resistance of this MOSFET?

The typical on-resistance is 40 mOhm.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NTBG040N120SC1 supplied in?

It is supplied in a D2PAK-7L package.

Is this device RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the maximum power dissipation?

The maximum power dissipation is 357W (Tc).

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