| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
778 pcs
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778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The On Semiconductor NTBG025N065SC1 is a high-performance N-Channel Silicon Carbide (SiC) MOSFET. It is designed for demanding applications requiring efficient power conversion and high reliability.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 106A at 25°C. The device offers a low on-resistance (Rds On) of 28.5mOhm at 45A and 18V, contributing to reduced conduction losses. With a maximum power dissipation of 395W at 25°C, it is suitable for high-power systems.
This MOSFET operates within a junction temperature range of -55°C to +175°C. It is packaged in a D2PAK-7L surface-mount package, facilitating integration into various electronic designs. The technology utilized is Silicon Carbide, offering advantages over traditional silicon MOSFETs in terms of efficiency and thermal performance.
Typical applications for the NTBG025N065SC1 include switching mode power supplies (SMPS), solar inverters, uninterruptible power supplies (UPS), and energy storage systems. Its robust design and advanced SiC technology make it a suitable choice for next-generation power electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $31.83 | $31.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 650 V.
The typical on-resistance (Rds On) is 19 mOhm at 45A and 18V gate-source voltage.
The continuous drain current (Id) is 106 A at 25°C.
The operating junction and storage temperature range is -55°C to +175°C.
The device is supplied in a D2PAK-7L package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.