| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,674 pcs
|
24674 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,150 pcs
|
1150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,150 pcs
|
1150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTBG022N120M3S from On Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET. This device is engineered for demanding power applications, offering a robust 1200V drain-to-source voltage rating.
Key electrical characteristics include a typical on-resistance of 22 mOhm at 18V gate-source voltage, and a maximum specified on-resistance of 30 mOhm at 40A and 18V. It boasts a low gate charge (Qg) of 142 nC and low output capacitance (Coss) of 146 pF, enabling high-speed switching with reduced losses. The device is 100% avalanche tested for enhanced reliability.
Packaged in a D2PAK-7L surface-mount package, the NTBG022N120M3S is suitable for various power conversion systems. Its operating temperature range is -55°C to 175°C (TJ), and it has a maximum power dissipation of 234W (Tc).
Typical applications for this SiC MOSFET include solar inverters, electric vehicle charging stations, uninterruptible power supplies (UPS), energy storage systems, and switch-mode power supplies (SMPS).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) is 1200 V.
The typical on-resistance (RDS(on)) is 22 mOhm at a gate-source voltage of 18 V.
The device is supplied in a D2PAK-7L package.
The operating junction and storage temperature range is -55°C to +175°C.
Yes, the RoHS status is RoHS3 Compliant.