NTBG014N120M3P The ON Semiconductor NTBG014N120M3P is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance applications. It offers a 1200V drain-to-source voltage and a low on-resistance.
Mfr Part #:

NTBG014N120M3P

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTBG014N120M3P is a Silicon Carbide (SiC) N-Channel MOSFET designed for high-performance applications. It offers a 1200V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NTBG014N120M3P Available from 1 distributor

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✓ Non-Authorised
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NTBG014N120M3P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTBG014N120M3P Description

Short technical summary and product information.

The ON Semiconductor NTBG014N120M3P is a high-performance Silicon Carbide (SiC) N-Channel MOSFET. It features a maximum drain-to-source voltage (Vdss) of 1200V and a low on-resistance (Rds(on)) of 20mOhm at 74A and 18V gate drive.

 

With a continuous drain current rating of 150A (Tc) and a maximum power dissipation of 454W (Tc), this MOSFET is suitable for demanding power applications. The operating temperature range is -55°C to 175°C (TJ), ensuring reliability in harsh environments.

 

The device utilizes SiC technology for improved efficiency and performance. It is available in a D2PAK-7 surface mount package, making it suitable for various power electronics designs.

 

Typical applications include solar inverters, electric vehicle charging stations, UPS systems, energy storage systems, and switch-mode power supplies.

NTBG014N120M3P Quick Information

Product Type: MOSFET
Series: M3P
Canonical Name: NTBG014N120M3P Silicon Carbide MOSFET
Subcategory: N-Channel

NTBG014N120M3P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTBG014N120M3P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTBG014N120M3P Features

  • 1200V drain-to-source voltage rating.
  • Low 20mOhm on-resistance at 74A.
  • High 150A continuous drain current.
  • Wide -55°C to 175°C operating temperature.
  • Silicon Carbide (SiC) MOSFET technology.

NTBG014N120M3P Applications

  • Suitable for solar inverters.
  • Used in EV charging stations.
  • Applicable for UPS systems.
  • Ideal for energy storage systems.
  • Designed for SMPS applications.

NTBG014N120M3P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTBG014N120M3P?

The maximum drain-to-source voltage (Vdss) is 1200 V.

What is the typical on-resistance of the NTBG014N120M3P?

The Rds On (Max) is 20 mOhm at 74A and 18V gate-to-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NTBG014N120M3P available in?

The device is available in a D2PAK-7 surface mount package.

What is the continuous drain current rating?

The continuous drain current is 150A at 25°C.

What is the input capacitance of the NTBG014N120M3P?

The input capacitance (Ciss) is a maximum of 6313 pF at 800V.

What is the gate charge for this MOSFET?

The gate charge (Qg) is a maximum of 337 nC at 18V.

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