NTB6413ANT4G The On Semiconductor NTB6413ANT4G is an N-Channel MOSFET with a 100V drain-to-source voltage and 42A continuous current capability. It features a low Rds On of 28mOhm at 10V.
Mfr Part #:

NTB6413ANT4G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTB6413ANT4G is an N-Channel MOSFET with a 100V drain-to-source voltage and 42A continuous current capability. It features a low Rds On of 28mOhm at 10V.
✓ Total Stock: 30,210 pcs
$ Price Range: $0.99

NTB6413ANT4G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
29,600 pcs
29600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
610 pcs
610 pcs On Request 1 On Request On Request 18+ On Request On Request

NTB6413ANT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTB6413ANT4G Description

Short technical summary and product information.

The On Semiconductor NTB6413ANT4G is a power MOSFET designed for various applications requiring high current and voltage handling. This N-Channel device boasts a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 42A at 25°C.

 

Key electrical characteristics include a low on-resistance (Rds On) of 28mOhm at 42A and 10V gate drive, and a gate threshold voltage (Vgs(th)) of 4V at 250µA. The device also offers a high power dissipation of 136W at 25°C.

 

Packaged in a surface-mount D2PAK (TO-263-3) package, the NTB6413ANT4G is suitable for applications where space is a consideration. It operates across a wide temperature range of -55°C to 175°C (TJ).

 

This MOSFET is Pb-Free and RoHS compliant, making it suitable for environmentally conscious designs.

NTB6413ANT4G Quick Information

Product Type: MOSFET
Series: NTB6413ANT4G
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NTB6413ANT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTB6413ANT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTB6413ANT4G Features

  • 100V drain-to-source voltage capability.
  • 42A continuous drain current rating.
  • Low 28mOhm Rds On at 10V.
  • Surface mount D2PAK package.
  • Wide -55°C to 175°C operating temperature.

NTB6413ANT4G Applications

  • Suitable for high-power switching.
  • Ideal for DC-DC converters.
  • Used in power management circuits.
  • Applicable in motor control systems.

NTB6413ANT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTB6413ANT4G?

The maximum drain-to-source voltage (Vdss) is 100 V.

What is the continuous drain current of the NTB6413ANT4G?

The continuous drain current is 42A at 25°C.

What is the Rds On for the NTB6413ANT4G?

The Rds On is a maximum of 28mOhm when the gate-to-source voltage is 10V and the drain current is 42A.

What is the operating temperature range for this MOSFET?

The operating junction temperature range is -55°C to 175°C.

What package type is the NTB6413ANT4G MOSFET in?

The NTB6413ANT4G is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

Is the NTB6413ANT4G RoHS compliant?

Yes, the NTB6413ANT4G is RoHS3 Compliant.

NTB6413ANT4G Alternate Parts

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