| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTB5405NG is a single N-Channel MOSFET manufactured by ON Semiconductor, designed for demanding power applications. It features a low on-resistance (Rds(on)) of 5.8mOhm at 40A and 10V gate drive, enabling efficient power handling.
With a maximum drain-source voltage (Vdss) of 40V and a continuous drain current of 116A at 25°C case temperature, this MOSFET is suitable for high-current applications. It boasts a high current capability and low gate charge, contributing to its performance.
The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 150W at 25°C case temperature. It is housed in a surface-mount D2PAK (TO-263-3) package, facilitating integration into various electronic circuits.
Applications include electronic brake systems, electronic power steering, and bridge circuits, where its robust specifications ensure reliable operation. The MOSFET is also Pb-Free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NTB5405NG is 40V.
The NTB5405NG has a continuous drain current of 116A at a case temperature of 25°C.
The on-resistance (Rds On) of the NTB5405NG is a maximum of 5.8mOhm at 40A drain current and 10V gate-source voltage.
The operating junction and storage temperature range for the NTB5405NG is -55°C to 175°C.
The NTB5405NG is supplied in a D2PAK package.
Yes, the NTB5405NG is RoHS3 compliant.