NTB23N03RT4G The NTB23N03RT4G is an N-Channel MOSFET from ON Semiconductor with a 25V drain-to-source voltage and 23A continuous drain current. It is designed for surface mount applications.
Mfr Part #:

NTB23N03RT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTB23N03RT4G is an N-Channel MOSFET from ON Semiconductor with a 25V drain-to-source voltage and 23A continuous drain current. It is designed for surface mount applications.
✓ Total Stock: 672 pcs
$ Price Range: $0.99

NTB23N03RT4G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
672 pcs
672 pcs On Request 1 On Request On Request 0844+ On Request On Request

NTB23N03RT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTB23N03RT4G Description

Short technical summary and product information.

This N-Channel MOSFET, part number NTB23N03RT4G from ON Semiconductor, offers a drain-to-source voltage (Vdss) of 25V and a continuous drain current (Id) capability of 23A. It features a maximum on-resistance (Rds On) of 45mOhm when measured at 6A and 10V gate-source voltage.

 

The device operates within a temperature range of -55°C to 150°C (TJ) and has a gate-to-source voltage (Vgs) tolerance of ±20V. The input capacitance (Ciss) is rated at a maximum of 225pF at 20V, and the gate charge (Qg) is a maximum of 3.76nC at 4.5V.

 

Designed for surface mounting, the NTB23N03RT4G comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package. Its technology is based on MOSFET (Metal Oxide) principles, providing efficient switching characteristics for various electronic applications.

 

Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified. The maximum power dissipation is 37.5W at Tj.

NTB23N03RT4G Quick Information

Product Type: MOSFET
Series: NTB23N03RT4G
Canonical Name: NTB23N03RT4G N-Channel MOSFET
Subcategory: N-Channel

NTB23N03RT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTB23N03RT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTB23N03RT4G Features

  • 25V drain-to-source voltage rating.
  • 23A continuous drain current capability.
  • Surface mount D2PAK package.
  • Low Rds On of 45mOhm at 6A, 10V.
  • Wide operating temperature range.

NTB23N03RT4G Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Ideal for load management.
  • Applicable in battery powered devices.

NTB23N03RT4G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTB23N03RT4G?

The maximum drain-to-source voltage (Vdss) is 25V.

What is the continuous drain current of the NTB23N03RT4G MOSFET?

The continuous drain current (Id) is 23A.

What is the Rds On for the NTB23N03RT4G at specified conditions?

The Rds On is a maximum of 45mOhm at 6A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NTB23N03RT4G available in?

It is available in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package for surface mounting.

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