NTB190N65S3HF The ON Semiconductor NTB190N65S3HF is an N-Channel MOSFET designed for high voltage applications. It features a 650V drain-source voltage and a 20A continuous drain current.
Mfr Part #:

NTB190N65S3HF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTB190N65S3HF is an N-Channel MOSFET designed for high voltage applications. It features a 650V drain-source voltage and a 20A continuous drain current.
✓ Total Stock: 59,200 pcs
$ Price Range: $0.99

NTB190N65S3HF Available from 1 distributor

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✓ Non-Authorised
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59,200 pcs
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NTB190N65S3HF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTB190N65S3HF Description

Short technical summary and product information.

The ON Semiconductor NTB190N65S3HF is a SUPERFET III FRFET MOSFET with an N-Channel configuration. It is designed for high voltage applications, offering a drain-source voltage of 650V and a continuous drain current of 20A at 25°C.

 

Key electrical characteristics include a maximum on-resistance of 190mOhm at 10A and 10V, and a typical gate charge of 34nC at 10V. The device also features a typical RDS(on) of 161mOhm and an ultra-low gate charge.

 

This MOSFET is suitable for various power systems requiring miniaturization and higher efficiency, such as Telecom/Server Power Supplies, Industrial Power Supplies, EV Chargers, and UPS/Solar applications. Its optimized reverse recovery performance of the body diode can improve system reliability.

 

The NTB190N65S3HF comes in a TO-263-3, D²Pak surface mount package, facilitating integration into compact designs.

NTB190N65S3HF Quick Information

Product Type: N-Channel MOSFET
Series: FRFET®, SuperFET® III
Canonical Name: N-Channel MOSFET, 650 V, 20 A
Subcategory: N-Channel

NTB190N65S3HF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTB190N65S3HF Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTB190N65S3HF Features

  • 650V drain-source voltage rating.
  • 20A continuous drain current capability.
  • 190mOhm maximum on-resistance.
  • Low gate charge for efficient switching.
  • Surface mount D2PAK-3 package.

NTB190N65S3HF Applications

  • Telecom and server power supplies.
  • Industrial power supply applications.
  • Electric vehicle chargers.
  • UPS and solar power systems.

NTB190N65S3HF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the NTB190N65S3HF?

The drain-source voltage is 650 V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 20 A at 25°C.

What is the typical on-resistance of the NTB190N65S3HF?

The typical on-resistance is 161 mOhm.

What is the package type for the NTB190N65S3HF?

The package type is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

Is the NTB190N65S3HF RoHS compliant?

Yes, it is RoHS3 Compliant.

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