| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,240 pcs
|
14240 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTB110N65S3HF is a N-channel power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications, with a drain-source voltage (Vdss) of 650V and a continuous drain current of 30A at 25°C. The device features a maximum gate-to-source voltage (Vgs) of ±30V and a gate threshold voltage of 5V at 740µA. Its Rds On (max) is 110 mOhm at 15A and 10V, making it suitable for power switching with low conduction losses. The input capacitance (Ciss) is 2635 pF at 400V, and the gate charge (Qg) is 62 nC at 10V. The maximum power dissipation is 240W at 25°C, and it can operate at temperatures up to 150°C. The package type is D2PAK-3, which is suitable for surface mounting in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The maximum gate-to-source voltage (Vgs) is ±30V.
The maximum Rds On is 110 mOhm at 15A and 10V.
The maximum power dissipation is 240W at 25°C.
It uses a D2PAK-3 package for surface mounting.