NTB082N65S3F The On Semiconductor NTB082N65S3F is an N-Channel MOSFET designed for high voltage applications. It offers a 650V drain-source voltage and 40A continuous current.
Mfr Part #:

NTB082N65S3F

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTB082N65S3F is an N-Channel MOSFET designed for high voltage applications. It offers a 650V drain-source voltage and 40A continuous current.
✓ Total Stock: 50,185 pcs
$ Price Range: $0.99

NTB082N65S3F Available from 6 distributors

✓ Authorised
✓ Non-Authorised

NTB082N65S3F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTB082N65S3F Description

Short technical summary and product information.

The NTB082N65S3F from On Semiconductor is a SUPERFET III N-Channel MOSFET. It utilizes charge balance technology for low on-resistance and gate charge performance, suitable for various power systems requiring miniaturization and higher efficiency.

 

Key electrical specifications include a maximum drain-source voltage of 650V and a continuous drain current of 40A at 25°C case temperature. The Rds(on) is a maximum of 82mOhm at 20A and 10V gate-source voltage, with a gate charge of 81nC typical at 10V. The input capacitance is 3410pF maximum at 400V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 313W at 25°C case temperature. It is packaged in a D2PAK (TO-263) surface mount package.

 

Applications for this device include Telecom / Server Power Supplies, Industrial Power Supplies, EV Chargers, and UPS / Solar systems.

NTB082N65S3F Quick Information

Product Type: MOSFET
Series: SUPERFET III FRFET
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NTB082N65S3F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTB082N65S3F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTB082N65S3F Features

  • 650V drain-source voltage rating.
  • 40A continuous drain current capability.
  • Low 82mOhm Rds(on) at 20A, 10V.
  • Surface mount D2PAK package.
  • Suitable for high-efficiency power systems.

NTB082N65S3F Applications

  • Used in telecom power supplies.
  • Suitable for industrial power supplies.
  • Applied in EV charger designs.
  • Incorporated in UPS systems.
  • Used in solar power applications.

NTB082N65S3F FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTB082N65S3F?

The maximum drain-source voltage (Vdss) is 650 V.

What is the continuous drain current of the NTB082N65S3F?

The continuous drain current is 40A at 25°C case temperature.

What is the Rds(on) for the NTB082N65S3F?

The Rds(on) is a maximum of 82mOhm at 20A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating and storage temperature range is -55°C to 150°C (TJ).

What package type is the NTB082N65S3F supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package.

Home
Account

Categories