| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
226,020 pcs
|
226020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
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78,000 pcs
|
78000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
66,731 pcs
|
66731 pcs | On Request | 1 | On Request | On Request | 1903+ | On Request | On Request | |||||||||
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
1,470 pcs
|
1470 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
909 pcs
|
909 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
350 pcs
$0.22
|
350 pcs |
$0.22
|
1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTA4151PT1G from ON Semiconductor is a single P-Channel MOSFET designed for efficient operation in battery-powered systems. It offers a low RDS(on) for improved efficiency and extended battery life.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 760mA. The gate-to-source voltage (Vgs) is rated at ±6V, with a threshold voltage (Vgs(th)) of 1.2V maximum at 250µA. The on-resistance (Rds(on)) is a maximum of 360mOhm at 350mA and 4.5V gate drive.
This MOSFET is housed in a compact SC-75 (SOT-416) surface-mount package, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ).
The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it suitable for environmentally conscious applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTA4151PT1G is 20V.
The continuous drain current (Id) is 760mA.
The maximum Rds(on) is 360mOhm at 350mA drain current and 4.5V gate-to-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
The NTA4151PT1G is supplied in an SC-75 (SOT-416) package.
Yes, the NTA4151PT1G is RoHS3 compliant.