BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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563 pcs
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563 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
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163 pcs
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163 pcs | On Request | 1 | On Request | On Request | 1512 | On Request | On Request | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NT5TU64M16GG-AC from Nanya Technology is a high-quality memory component designed for various electronic applications. This part utilizes DDR2 SDRAM technology, offering a chip density of 1 Gbit and an organization of 64Mx16.
Key electrical specifications include a maximum clock rate of 800 MHz and a maximum access time of 0.4 ns. The interface type is SSTL_1.8, with an operating supply voltage range of 1.7V to 1.9V. The component has a data bus width of 16 bits and an address bus width of 16 bits.
Packaged in a BGA-84 form factor, the NT5TU64M16GG-AC is suitable for surface-mount designs. It operates within a temperature range of 0°C to an unspecified maximum. The memory module contains 8 internal banks, each with 8M words per bank, and a word size of 16 bits.
This memory component is classified under the DDR2 SDRAM type, making it a reliable choice for systems requiring efficient data storage and retrieval. Its specifications suggest suitability for applications demanding moderate to high memory bandwidth.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The NT5TU64M16GG-AC uses DDR2 SDRAM.
The chip density is 1 Gbit.
The maximum clock rate is 800 MHz.
The operating supply voltage ranges from 1.7V to 1.9V.
The NT5TU64M16GG-AC is supplied in a BGA-84 package.