| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 1003+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The NANYA NT5DS16M16CS-5T is a 256Mb DDR SDRAM device based on Nanya's 110nm design process. It features a double data rate architecture, enabling two data transfers per clock cycle for high-speed operation. This memory component utilizes a bidirectional data strobe (DQS) for data capture and operates with differential clock inputs (CK and CK).
Key electrical specifications include selectable CAS Latency values of 2/2.5 for DDR333 and 2.5/3 for DDR400, along with programmable burst lengths of 2, 4, or 8. The device supports operating voltages of 2.3V to 2.7V for DDR333 and 2.5V to 2.7V for DDR400. It also features four internal banks for concurrent operation and a maximum average periodic refresh interval of 7.8µs.
The NT5DS16M16CS-5T is available in Die C packaging and is compatible with SSTL_2 standards for I/O. It supports Auto Refresh and Self Refresh modes, as well as a power-saving Power Down mode. The component is available in Halogen and Lead Free packaging options.
The NT5DS16M16CS-5T is a DDR SDRAM.
The density is 256Mb.
For DDR333, the voltage is 2.3V to 2.7V. For DDR400, the voltage is 2.5V to 2.7V.
The CAS Latency for DDR333 is typically 2 and a maximum of 2.5.
The CAS Latency for DDR400 is typically 2.5 and a maximum of 3.
The available burst lengths are 2, 4, or 8.
The maximum average periodic refresh interval is 7.8µs.