| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,150 pcs
|
3150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| SVHC Present | |
| Speed |
This Nanya Technology NT5AD256M16E4-JR is a high-performance DDR4 Synchronous Dynamic Random-Access Memory (SDRAM) module. It offers a substantial 4Gb density and operates with a x16 configuration, making it suitable for memory-intensive applications.
The component boasts a speed rating of 3200Mbps, ensuring rapid data transfer rates critical for modern computing systems. It is housed in a compact 96-ball Ball Grid Array (BGA) package, facilitating efficient board space utilization and integration into various electronic designs.
Designed for commercial applications, this Nanya DRAM is built to meet the demands of applications requiring reliable and fast memory solutions. Its specifications suggest suitability for use in consumer electronics, office equipment, and portable devices where performance and density are key considerations.
The DRAM density is 4Gb.
The speed is 3200Mbps.
It uses a 96-ball BGA package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.