NSVTB60BDW1T1G The NSVTB60BDW1T1G is an NPN/PNP bias resistor transistor combination from ON Semiconductor. It is supplied in a compact SC-88/SOT-363 package.
Mfr Part #:

NSVTB60BDW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NSVTB60BDW1T1G is an NPN/PNP bias resistor transistor combination from ON Semiconductor. It is supplied in a compact SC-88/SOT-363 package.
✓ Total Stock: 2,900 pcs
$ Price Range: $0.99

NSVTB60BDW1T1G Available from 1 distributor

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✓ Non-Authorised
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NSVTB60BDW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVTB60BDW1T1G Description

Short technical summary and product information.

The NSVTB60BDW1T1G is a versatile NPN/PNP bias resistor transistor combination manufactured by ON Semiconductor. This device simplifies circuit design, reduces board space, and lowers component count. It features a collector-emitter voltage rating of up to 50V and a continuous collector current of 150mA for each transistor.

 

The transistor array includes integrated resistors with a typical value of 47kΩ. It offers a DC current gain (hFE) of 80 to 120 at 5mA and 5mA respectively, with a saturation voltage (Vce(sat)) of 250mV or 500mV depending on the operating conditions.

 

Designed for surface mounting, the NSVTB60BDW1T1G comes in the SC-88/SC70-6/SOT-363 package, making it suitable for space-constrained applications. The device operates within a junction and storage temperature range of -55°C to +150°C and has an ESD rating of Class 1B for the Human Body Model and Class B for the Machine Model.

 

This component is Pb-Free and Halogen Free, complying with RoHS standards. It is available in tape and reel packaging, with 3000 units per reel.

NSVTB60BDW1T1G Quick Information

Product Type: Transistor Array
Canonical Name: NPN/PNP Bias Resistor Transistor Combination
Subcategory: Pre-Biased BJT

NSVTB60BDW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVTB60BDW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVTB60BDW1T1G Features

  • NPN and PNP transistor combination.
  • Simplifies circuit design and reduces board space.
  • Rated for 50V collector-emitter voltage.
  • Continuous collector current of 150mA.
  • Surface mount SC-88/SOT-363 package.

NSVTB60BDW1T1G Applications

  • Ideal for digital logic circuits.
  • Suitable for signal switching applications.
  • Used in portable electronic devices.
  • Applicable in power management circuits.

NSVTB60BDW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVTB60BDW1T1G?

The maximum collector-emitter voltage is 50V for the NPN transistor (Q2) and -50V for the PNP transistor (Q1).

What is the continuous collector current rating?

The continuous collector current is 150mA for both the NPN (Q2) and PNP (Q1) transistors.

What is the integrated resistor value?

The integrated resistor value is 47kΩ.

What is the package type for the NSVTB60BDW1T1G?

The device is supplied in an SC-88/SC70-6/SOT-363 package.

What is the operating temperature range?

The junction and storage temperature range is -55°C to +150°C.

Is the NSVTB60BDW1T1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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