| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,890 pcs
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2890 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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| Halogen Free | |
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The On Semiconductor NSVT5401MR6T1G is a PNP bipolar junction transistor (BJT) housed in a compact TSOT-23-6 surface mount package. This device is designed for general-purpose amplification and switching applications.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 150V and a maximum collector current (Ic) of 600mA. It offers a typical DC current gain (hFE) of 60 at 10mA and 5V. The transistor has a typical saturation voltage (Vce) of 500mV at 5mA, 50mA and a transition frequency (fT) of 300MHz.
The operating temperature range for the NSVT5401MR6T1G is from -55°C to 150°C. Its surface mount packaging makes it suitable for automated assembly processes on printed circuit boards.
This component is suitable for various electronic circuits requiring PNP transistor functionality, such as in signal amplification stages or as a low-side switch.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 600mA.
The collector-emitter voltage rating is 150V.
The transition frequency is 300MHz.
The operating temperature range is -55°C to 150°C.
It is in a TSOT-23-6 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.