| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor NSVT45010MW6T3G is a dual matched PNP transistor array housed in an ultra-small SOT-363 package, making it ideal for portable applications. This device features matched parameters, eliminating the need for costly trimming. It is designed for applications such as Current Mirrors, Differential, Sense and Balanced Amplifiers, Mixers, Detectors, and Limiters.
Key electrical specifications include a collector-emitter voltage (VCEO) of -45V and a continuous collector current (IC) of -100mA. The DC current gain (hFE) is typically 220 at 2mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 650mV at 5mA base current and 100mA collector current. The device operates across a wide temperature range from -55°C to +150°C.
This transistor array is surface-mountable and comes in a 6-TSSOP, SC-88, SOT-363 package. It is Pb-Free and Halogen Free, complying with RoHS standards. A complementary NPN equivalent, the NST45011MW6T1G, is also available.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSVT45010MW6T3G is -45V.
The continuous collector current (IC) rating is -100mA.
The typical DC current gain (hFE) is 220 at 2mA collector current and 5V collector-emitter voltage.
The operating temperature range is -55°C to +150°C.
The NSVT45010MW6T3G is supplied in a SOT-363 package.
Yes, the NSVT45010MW6T3G is RoHS3 Compliant.