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NSVT3946DXV6T1G The ON Semiconductor NSVT3946DXV6T1G is a dual NPN/PNP bipolar transistor designed for general-purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA collector current, housed in a compact SOT-563 package.
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NSVT3946DXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSVT3946DXV6T1G is a dual NPN/PNP bipolar transistor designed for general-purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA collector current, housed in a compact SOT-563 package.
✓ Total Stock: 216,000 pcs
$ Price Range: $0.99

NSVT3946DXV6T1G Available from 1 distributor

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NSVT3946DXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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NSVT3946DXV6T1G Description

Short technical summary and product information.

The NSVT3946DXV6T1G from ON Semiconductor is a complementary general-purpose transistor featuring two discrete devices within a single SOT-563 surface mount package. This configuration is ideal for low-power applications where board space is limited, simplifying circuit design and reducing component count.

 

This dual transistor offers a collector-emitter voltage (VCEO) of 40V for the NPN and -40V for the PNP. The continuous collector current (IC) is rated at 200mA for the NPN and -200mA for the PNP. It boasts a typical DC current gain (hFE) of 100 at 10mA and 1V, with low VCE(sat) values of 300mV at 5mA/50mA for one configuration and 400mV for the other. The gain bandwidth product (fT) is 300MHz.

 

Operating across a temperature range of -55°C to 150°C, the NSVT3946DXV6T1G has a total power dissipation of 357mW (one junction heated) or 500mW (both junctions heated) at 25°C ambient. It is supplied in a SOT-563 surface mount package, suitable for automated assembly processes. The device is Pb-free and Halogen-free, complying with RoHS standards.

NSVT3946DXV6T1G Quick Information

Product Type: Dual NPN/PNP Transistor
Canonical Name: Dual NPN/PNP Transistor
Subcategory: Arrays

NSVT3946DXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVT3946DXV6T1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVT3946DXV6T1G Features

  • Dual NPN and PNP transistor configuration.
  • 40V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • Compact SOT-563 surface mount package.
  • Wide operating temperature range of -55°C to 150°C.

NSVT3946DXV6T1G Applications

  • Ideal for space-constrained applications.
  • Suitable for general-purpose amplification.
  • Used in low-power surface mount designs.
  • Simplifies circuit board layout.
  • Reduces overall component count.

NSVT3946DXV6T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVT3946DXV6T1G?

The maximum collector-emitter voltage (VCEO) is 40V for the NPN and -40V for the PNP.

What is the continuous collector current rating?

The continuous collector current (IC) is 200mA for the NPN and -200mA for the PNP.

What is the typical DC current gain (hFE) of this transistor?

The typical DC current gain (hFE) is 100 at 10mA collector current and 1V collector-emitter voltage.

What is the Vce saturation voltage?

Vce saturation is a maximum of 300mV at 5mA base current and 50mA collector current, or 400mV at 5mA base current and 50mA collector current.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NSVT3946DXV6T1G supplied in?

This transistor is supplied in a SOT-563 surface mount package.

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