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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-to-Emitter Saturation Voltage | |
| Collector Current (Pulse) | |
| Collector Cutoff Current | |
| Collector-to-Base Breakdown Voltage | |
| Collector-to-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (Minimum @ IC = 400 mA, VCE = 5 V) | |
| DC Current Gain (Minimum/Typical @ IC = -100 mA, VCE = -5 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-to-Base Breakdown Voltage | |
| Fall Time | |
| Frequency | |
| Gain Bandwidth Product (Typical @ IC = 100 mA, VCE = 10 V) | |
| Gain Bandwidth Product (Unspecified condition) | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ Mounted on FRB with 1 in/sq pad of Copper 2 oz) | |
| Power Dissipation (Maximum @ Mounted on FRB with minimum pad of Copper 2 oz) | |
| Power Dissipation (Maximum) | |
| Storage Temperature Range | |
| Storage Time | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ IB = 25 mA, IC = 250 mA) | |
| Vce Saturation (Maximum @ IB = 50 mA, IC = 250 mA) | |
| Vce Saturation (Maximum @ Ib = 50 mA, Ic = 500 mA) | |
| Voltage |
The ON Semiconductor NSVT1602CLTWG is an NPN bipolar junction transistor designed for high current applications requiring low saturation voltage and high-speed switching. It offers a collector-emitter voltage of 160V and a continuous collector current of 1.5A, with a pulse capability of 2.5A.
This device boasts a low collector-to-emitter saturation voltage (VCE(sat)) of up to 140mV at 500mA, contributing to efficient power management. Its gain-bandwidth product is 100MHz, indicating good high-frequency performance. The transistor is AEC-Q101 qualified and PPAP capable, making it suitable for demanding automotive applications.
Packaged in a compact 8-LFPAK surface-mount package, the NSVT1602CLTWG is designed for efficient thermal dissipation, with a maximum junction temperature of 175°C. It operates across a wide temperature range from -55°C to +175°C.
Key electrical characteristics include a high DC current gain (hFE) and fast switching times, with turn-on and fall times of 30ns. The device is Pb-free, halogen-free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NSVT1602CLTWG is 160V.
The continuous collector current (IC) rating for the NSVT1602CLTWG is 1.5A.
The typical collector-emitter saturation voltage (VCE(sat)) at 500mA collector current and 50mA base current is 0.07V to 0.14V.
The operating junction temperature range for this device is -55°C to +175°C.
The NSVT1602CLTWG is supplied in the 8-LFPAK surface-mount package.
Yes, this component is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) is 1.