NSVT1418LT1G The ON Semiconductor NSVT1418LT1G is a PNP bipolar junction transistor. It offers high current, low saturation voltage, and high-speed switching capabilities.
Mfr Part #:

NSVT1418LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NSVT1418LT1G is a PNP bipolar junction transistor. It offers high current, low saturation voltage, and high-speed switching capabilities.
Total Stock: 513,110 pcs
$ Price Range: $0.99

NSVT1418LT1G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
512,110 pcs
512110 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

NSVT1418LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = -1 mA, RBE = ∞)
Breakdown Voltage (Minimum @ IC = -10 mA, IE = 0 A)
Breakdown Voltage (Minimum @ IE = -10 mA, IC = 0 A)
Collector Dissipation
Current
Current Gain (Minimum @ VCE = -5 V, IC = -10 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Fall Time
Frequency
Gain-Bandwidth Product
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Saturation Voltage (Maximum @ IC = -250 mA, IB = -50 mA)
Storage Temperature Range
Storage Time
Supplier Device Package
Transistor Type
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage

NSVT1418LT1G Description

Short technical summary and product information.

The ON Semiconductor NSVT1418LT1G is a single PNP bipolar junction transistor designed for high current, low saturation voltage, and high-speed switching applications. It features a maximum collector-emitter voltage of -160V and a continuous collector current of -1A.

 

This device is suitable for automotive applications and is AEC-Q101 qualified and PPAP capable. Key electrical characteristics include a typical gain-bandwidth product of 120MHz and a low saturation voltage of -0.5V maximum at -250mA collector current and -25mA base current.

 

The transistor is housed in a compact SOT-23-3 (TO-236) surface-mount package, facilitating miniaturization in end products. It operates at junction temperatures up to 150°C and has a power dissipation of 420mW when surface-mounted.

 

Features like high current capacitance, low collector-to-emitter saturation voltage, and high-speed switching make it ideal for applications such as high-side switching, lighting, and infotainment systems.

NSVT1418LT1G Quick Information

Product Type: Bipolar Transistor
Canonical Name: PNP Bipolar Transistor, -160V, -1A
Subcategory: Single

NSVT1418LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NSVT1418LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NSVT1418LT1G Features

  • PNP bipolar junction transistor.
  • High current, low saturation voltage.
  • High speed switching capability.
  • AEC-Q101 qualified and PPAP capable.
  • Compact SOT-23-3 surface mount package.

NSVT1418LT1G Applications

  • Suitable for automotive applications.
  • Ideal for high-side switch circuits.
  • Used in lighting applications.
  • Applicable for infotainment systems.

NSVT1418LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the NSVT1418LT1G?

-160 V

What is the continuous collector current rating?

-1 A

What is the operating temperature range?

150°C (TJ)

What package type is the NSVT1418LT1G supplied in?

SOT-23-3 (TO-236)

Is this component RoHS compliant?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL)?

1 Unlimited

What is the typical gain-bandwidth product?

120 MHz

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