NSVMUN5333DW1T1G
On Semiconductor
The NSVMUN5333DW1T1G is a pre-biased transistor array from ON Semiconductor, featuring 1 NPN and 1 PNP transistor. It operates at 50V and is housed in a compact SOT-363 package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
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| Resistor | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The On Semiconductor NSVMUN5333DW1T3G is a complementary bipolar transistor array designed to replace single transistors and their external bias resistor networks. This device integrates two transistors, one NPN and one PNP, along with monolithic bias resistors, into a compact SOT-363 package. It simplifies circuit design, reduces component count, and saves board space.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50Vdc and a continuous collector current (IC) of 100mAdc. The pre-biased configuration includes a nominal base resistor of 47kΩ (R2) and a series base resistor (R1) of 4.7kΩ. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA/10V and a Vce saturation of 250mV maximum at 1mA/10mA.
This transistor array is suitable for applications requiring reduced component count and simplified board layout. Its surface mountable SOT-363 package makes it ideal for space-constrained designs. The device is Pb-free and halogen-free, complying with modern environmental standards.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the NSVMUN5333DW1T3G is 50 Vdc.
The continuous collector current (IC) for this device is 100 mAdc.
The NSVMUN5333DW1T3G is supplied in a SOT-363 package.
The device features a base-emitter resistor of 47 kΩ and a series base resistor of 4.7 kΩ.
The NSVMUN5333DW1T3G is a surface mount device.